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| 2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Symbol Ratings Unit V VDS 600 A ID 10 A ID(puls] 40 V VGS 30 A IAR *2 10 mJ EAS *1 217 kV/s dVDS/dt *4 20 dV/dt *3 5 kV/s PD Ta=25C 2.16 W Tc=25C 50 +150 Operating and storage Tch C -55 to +150 temperature range Tstg C *1 L=3.99mH, Vcc=60V *2 Tch <150C *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = = *4 VDS < 600V = Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions VGS=0V ID=1mA ID= 250A VDS=VGS Tch=25C VDS=600V VGS=0V Tch=125C VDS=480V VGS=0V VGS=30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=5A VGS=10V RGS=10 VCC=250V ID=10A VGS=10V L=3.99mH Tch=25C IF=10A VGS=0V Tch=25C IF=10A VGS=0V -di/dt=100A/s Tch=25C Min. 600 3.0 Typ. Max. 5.0 25 250 100 0.75 Units V V A nA S pF 4 10 0.58 8 1200 1800 140 210 6 9 17 26 15 23 35 53 7 11 30 45 11 16.5 10 15 1.00 0.75 5.0 ns nC 10 1.50 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.5 58.0 Units C/W C/W 1 2SK3502-01MR Characteristics Allowable Power Dissipation PD=f(Tc) 60 300 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=10A 50 250 40 200 30 EAV [mJ] 0 25 50 75 100 125 150 PD [W] 150 20 100 10 50 0 0 0 25 50 75 100 125 150 Tc [C] starting Tch [ C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 22 20 18 10 16 14 20V 10V 8V 7.5V Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID [A] 12 7.0V 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 VGS=6.5V ID[A] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 2.0 VGS=6.5V 7.0V 1.5 RDS(on) [ ] 10 gfs [S] 1.0 7.5V8V 10V 20V 1 0.5 0.1 0.1 1 10 0.0 0 5 10 15 20 ID [A] ID [A] 2 2SK3502-01MR FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 2.0 1.8 1.6 1.4 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA max. VGS(th) [V] RDS(on) [ ] 4.5 4.0 3.5 3.0 min. typ. 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 typ. max. 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics 24 22 20 18 16 480V Vcc= 120V 300V 1n VGS=f(Qg):ID=10A, Tch=25C 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss VGS [V] 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 1p 10 -1 C [F] 100p Coss 10p Crss 10 0 10 1 10 2 10 3 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode 100 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=10 IF=f(VSD):80s Pulse test,Tch=25C 10 10 2 tr td(off) IF [A] t [ns] td(on) 10 1 tf 1 10 0.1 0.00 0 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 0 10 1 ID [A] 3 2SK3502-01MR FUJI POWER MOSFET Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T 10 1 D=0.5 10 0 0.2 0.1 0.05 Zth(ch-c) [ C/W] o 10 -1 0.02 0.01 t 10 -2 D= t T 0 T 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C. Vcc=60V Avalanche current IAV [A] 10 1 Single Pulse 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 4 |
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